Removal of Photoresist with Ozonated DI Water in a Centrifugal Spray Processor

摘要

Room-temperature super-saturated ozonated DI water has been used in a spray processor to efficiently strip photoresist from semiconductor wafers. Recently-available technology has been implemented to dissolve ozone in room-temperature DI water at concentrations up to 120 ppm. The supersaturated ozonated water has been used to strip hard-baked photoresist, low-dosage ion-implanted photoresist and plasma-exposed photoresist. It has also been used to strip photoresist in the presence of exposed aluminum. The destruction of dissolved ozone that is normally catalyzed by exposure to metal has been counteracted by the addition of dilute ammonium bicarbonate.