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Application of an ozonated DI water spray to resist residue removal processes

机译:臭氧化去离子水喷雾的应用,以抵抗残留物的去除过程

摘要

A method and apparatus for resist strip. Wafers (108) with a patterned resist formed thereon are placed in a carrier (104) in a process chamber (102). An ozonated deionized water mist (120) is sprayed on the surface of wafer (108). The ozonated deionized water mist (120) strips the resist and removes the resist residue without the use of hazardous chemicals. The ozonated deionized water mist (120) may be formed in an atomizer that mixes deionized water (116) with ozone (118). The ozonated deionized water mist (120) is then sprayed onto the wafers (108) while the wafers are being rotated.
机译:用于抗蚀剂剥离的方法和设备。将其上形成有图案化抗蚀剂的晶圆( 108 )放置在处理室( 102 )中的载体( 104 )中。将臭氧化的去离子水雾( 120 )喷涂在晶片( 108 )的表面上。臭氧化的去离子水雾( 120 )可以剥离抗蚀剂并去除抗蚀剂残留物,而无需使用有害化学物质。可以在将去离子水( 116 )与臭氧( 118 )混合的雾化器中形成臭氧化的去离子水雾( 120 )。然后,在旋转晶片的同时,将经过臭氧处理的去离子水雾( 120 )喷涂到晶片( 108 )上。

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