首页> 外文会议>14th international symposium on industrial crystallization : Abstracts of papers >INDUCTION TIME OF SURFACE NUCLEATION OF D-SCMC ON LSCMC SEED CRYSTAL AND THE GROWTH RATE OF L-SCMC SEED CRYSTAL IN DL-SCMC SUPERSATURATED SOLUTION
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INDUCTION TIME OF SURFACE NUCLEATION OF D-SCMC ON LSCMC SEED CRYSTAL AND THE GROWTH RATE OF L-SCMC SEED CRYSTAL IN DL-SCMC SUPERSATURATED SOLUTION

机译:DL-SCMC超饱和溶液中LSCMC种子晶体上D-SCMC表面成核的诱导时间和L-SCMC种子晶体的生长速率

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摘要

L-SCMC seed crystal was added into a supersaturated solution of S-Carboxymethyl-rnDL-Cysteine (DL-SCMC) which was kept on a given temperature in an agitatedrnvessel, and the change of concentrations of D-, and L-SCMC in solution wasrnobserved on batch operation. In this study, the time that required for beginning torndecrease of concentration of D-SCMC since the seed was added, was obtained as anrninduction time for surface nucleation of D-SCMC on the surface of L-SCMC seedrnand was correlated with suspension density and supersaturation ratio for the range ofrnsuspension density of 0.5~10%, supercoolingDT of 8.5~17K, pH of 0.5~2.8. Therndecreasing rate of L-SCMC concentration was also obtained by observing thernchange of concentration of L-SCMC against the operation time. The coefficient ofrncrystal growth rate of L-SCMC crystal was changed when the surface nucleation ofrnD-SCMC took place on the surface of L-SCMC seed and the phenomenon wasrndiscussed on induction time. The addition of given amount of HCl (10N) just beforernoperation time reached the induction time, was shown to affect the surfacernnucleation of D-SCMC and growth rate of L-SCMC, and it was discussed onrnoperational condition of optical resolution process.
机译:将L-SCMC晶种添加到S-羧甲基-rnDL-Cysteine(DL-SCMC)的过饱和溶液中,该溶液在搅拌的容器中保持在给定温度下,溶液中D-和L-SCMC的浓度变化在批处理操作中进行观察。在这项研究中,获得了自添加种子以来开始降低D-SCMC浓度所需的时间,因为L-SCMC种子表面D-SCMC表面成核的诱导时间与悬浮液密度和过饱和度相关。悬浮密度范围为0.5〜10%,过冷DT为8.5〜17K,pH为0.5〜2.8。通过观察L-SCMC浓度随操作时间的变化,还可以得出L-SCMC浓度的降低率。当L-SCMC晶种表面发生核成核时,L-SCMC晶体的晶生长速率系数发生变化,并且在诱导时间上讨论了该现象。在手术即将达到诱导时间之前,加入一定量的HCl(10N)会影响D-SCMC的表面成核和L-SCMC的生长速率,并讨论了光学拆分过程的操作条件。

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