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Dielectric breakdown from the nano- to millimeter scale:long known but still not well understood

机译:从纳米级到毫米级的介电击穿:众所周知,但仍不太清楚

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Although the dielectric breakdown is a long known failure phenomenon of bulk and thinfilm insulation materials surprisingly there is no comprehensive study available which combinesbreakdown measurements of bulk and thin film insulators.We investigate the size and permittivitydependence of the breakdown strength from the millimeter down to the nanometer range.Forthin films the intrinsic breakdown strength is determined,and a dielectric expression based onthe mechanical analogue of the theoretical mechanical strength is presented.For the breakdownstrength of bulk materials,we developed an energy release rate based "fracture" model,which isable to describe unstable dielectric breakdown of ceramic and polymer insulators.The predictionsof the two models are discussed in the context of the experimental results.
机译:尽管介电击穿是众所周知的块状和薄膜绝缘材料的故障现象,但令人惊讶的是,目前尚无综合研究将块状和薄膜绝缘子的击穿测量结合起来。我们研究了击穿强度从毫米到纳米的尺寸和介电常数的依赖性。确定薄膜的固有击穿强度,并基于理论机械强度的力学模拟给出介电表达式。对于块状材料的击穿强度,我们建立了基于能量释放率的“断裂”模型,该模型可以描述陶瓷和聚合物绝缘子的不稳定介电击穿。在实验结果的背景下讨论了这两种模型的预测。

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