Features of thin film CVD processes used in IC device technology

机译：IC器件技术中使用的薄膜CVD工艺的特征

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Basic film step coverage and gap-fill data has been consolidated and compared with the observed thin film CVD kinetics trends. Based on some assumptions regarding reaction kinetics, obtained correlations are believed to be applicable for an optimization of ultra small gap filling in deep submicron integrated circuit technology.

机译：基本的薄膜台阶覆盖率和间隙填充数据已得到巩固，并与观察到的薄膜CVD动力学趋势进行了比较。基于关于反应动力学的一些假设，获得的相关性被认为可用于深亚微米集成电路技术中的超小间隙填充的优化。

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《10th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM 2009)》|2009年|104-111|共8页
会议地点 Novosibirsk(RU);Novosibirsk(RU)
作者
Vasilyev V.Yu.;
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Novosibirsk State Tech. Univ., Novosibirsk, Russia;

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关键词
chemical vapour deposition; circuit optimisation; integrated circuit technology; thin films; CVD kinetics; integrated circuit device technology; optimization; reaction kinetics; thin film CVD process; ultra small gap filling; chemical vapor deposition; gap-fill; step coverage;

机译：化学气相沉积;电路优化;集成电路技术;薄膜; CVD动力学;集成电路器件技术;优化;反应动力学;薄膜CVD工艺;超小间隙填充;化学气相沉积;间隙填充;阶梯覆盖;

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1. MOCVD for complex multicomponent thin films-a leading edge technology for next generation devices [J] . M. Schumacher, J. Lindner, P. K. Baumann, Materials science in semiconductor processing . 2002,第2a3期

机译：用于复杂多组分薄膜的MOCVD-下一代器件的领先技术
2. ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes [J] . JIE SUN, DEVIN A. MOUREY, DALONG ZHAO, Journal of Electronic Materials . 2008,第5期

机译：使用低温PECVD工艺的ZnO薄膜，器件和电路制造
3. ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes [J] . Jie Sun, Devin A. Mourey, Dalong Zhao, Journal of Electronic Materials . 2008,第5期

机译：使用低温PECVD工艺的ZnO薄膜，器件和电路制造
4. Features of Thin Film CVD Processes Used in IC Device Technology [C] . Vladislav Yu. Vasilyev International Conference and Seminar on Micro/Nanotechnologies and Electron Devices . 2009

机译：IC器件技术中使用的薄膜CVD工艺的特点
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Features of thin film CVD processes used in IC device technology

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