Total ionizing dose effects on CMOS devices in a 110 nm technology

摘要

A detailed characterization of CMOS devices in a technology process with minimum channel length of 110 nm and manufactured by UMC is reported in this work. The devices were evaluated before and after exposure to X-ray from a 10 keV source, up to a Total Ionizing Dose (TID) of 5 Mrad. This study provides useful hints in the design of front-end systems for the readout of pixel radiation detectors in harsh radiation environment. The results shown in this work are the first step of an activity aiming at studying the effects of ionizing radiation on noise and static performance of the investigated technology.