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Self-optimizing circuits for mitigating total ionizing dose effects, temperature drifts, and aging phenomena in fully-depleted silicon-on-insulator technologies
Self-optimizing circuits for mitigating total ionizing dose effects, temperature drifts, and aging phenomena in fully-depleted silicon-on-insulator technologies
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机译:自优化电路,用于减轻完全耗尽的绝缘体上硅技术中的总电离剂量效应,温度漂移和老化现象
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摘要
A self-optimizing circuit for a FD-SOI device includes a static biasing circuit, a dosimeter, a reference circuit, an amplifier, a voltage source, and a feedback circuit. The static biasing circuit supplies a first bias. The dosimeter includes a dosimeter FD-SOI device and generates a dosimeter voltage sensitive to parametric shifts in the primary FD-SOI device. The reference circuit supplies a reference voltage. The amplifier is coupled to the dosimeter and the reference circuit, and supplies a second bias at an output of the static biasing circuit, the second bias proportional to a difference between the dosimeter voltage and the reference voltage. The voltage source generates a drive voltage to which the first bias and the second bias are referenced. The feedback circuit regulates supply of the drive voltage to a well of the dosimeter FD-SOI device according to the first bias and the second bias.
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