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机译:在32 nm CMOS SOI技术中,总电离剂量和温度对K带正交LC-Tank VCO的综合影响
Electrical Engineering Department, University of Tennessee at Chattanooga, Chattanooga, TN, USA;
NXP Semiconductors, Austin, TX, USA;
Department of Electrical Engineering and Computer Science, Nashville, TN, USA;
Department of Electrical Engineering and Computer Science, Nashville, TN, USA;
Department of Electrical Engineering and Computer Science, Nashville, TN, USA;
Department of Electrical Engineering and Computer Science, Nashville, TN, USA;
Department of Electrical Engineering and Computer Science, Nashville, TN, USA;
Voltage-controlled oscillators; Temperature measurement; Phase noise; Frequency measurement; Radio frequency; Degradation; Power generation;
机译:JICG CMOS晶体管,用于在130nm散装SiGe Bicmos技术中减少总电离剂量和单一事件效果
机译:130 nm部分耗尽的SOI CMOS技术中富硅浅沟槽隔离对总电离剂量硬化和栅极氧化物完整性的影响
机译:总电离剂量辐射对先进的体CMOS技术器件中NMOS寄生晶体管的影响
机译:用于32nm SOI CMOS天线阵列的定制前端SoC的总电离剂量特性
机译:先进CMOS技术中的总电离剂量效应。
机译:CMOS-SOI技术中的纳米集成温度和热传感器
机译:在高达1级的28 nm Hi-K金属栅CMOS技术上的总电离剂量效应