A method of forming a seed layer on a high aspect ratio via and a semiconductor device having a high aspect ratio via

摘要

A method of forming a seed layer on a high aspect ratio via (12), comprising: preparing a substrate (10, 30) having a via (12); and forming a seed layer (60) on the substrate (10, 30), wherein forming the seed layer (60) by a tilting motion for tilting the substrate (10, 30) forward, backward, left and right and rotating the substrate is performed such that a material (50) for forming the seed layer (60) is deposited at a predetermined angle θ or less and a change in direction of the substrate (10, 30) is intermittent or continuous, the through hole (12) being so configured , that a cross-sectional area of a through-hole opening after forming the seed layer is 50% or more compared to the state before forming the seed layer (60), viewed from above, characterized in that.a Mo seed layer and a Cu seed layer through successively Sputtering is applied so that a Mo seed layer and a Cu seed layer are alternately stacked to form a multilayer structure having a plurality of Mo cores m layers and Cu seed layers, wherein the forming of the seed layers (60) is performed by applying a target power of 2 ~ 5 kW, and wherein the through hole (12) is configured so that an average depth is at least 10 times an average width , based on its cross section.