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TEMPORARY BONDING AND DEBONDING PROCESS TO PREVENT DEFORMATION OF METAL CONNECTION IN THERMOCOMPRESSION BONDING

机译:临时粘接和脱粘工艺,防止热压粘接中金属连接变形

摘要

Achieving homogeneous and heterogeneous integration for 2.5D and 3D integrated circuit, chip-to-wafer, chip-to-substrate, or wafer-to-wafer bonding is an essential technology. The landing wafer or substrate is bonded with a carrier by using a temporary bonding material before thinning the landing wafer to the desired thickness. Upon completion of redistribution layer formation, Cu pad formation, or other backside processing, dies or wafers with through-silicon vias are stacked onto the landing substrate before molding and singulation. As the landing wafer usually has interconnection metals in the bond line, and those interconnection metals are typically made from lead-free solder alloys, deformation of those solder alloys during thermocompression bonding becomes an issue for manufacturers. To address this issue, a polymeric material with desired strengths is coated on the device wafer to form a conformal protective layer on top of solder alloys, thus enabling temporary bonding and debonding processes.
机译:实现2.5D和3D集成电路、芯片到晶圆、芯片到基板或晶圆到晶圆键合的同构和异构集成是一项必不可少的技术。在将着陆晶圆减薄至所需厚度之前,使用临时键合材料将着陆晶圆或基板与载体粘合。在完成再分布层形成、铜焊盘形成或其他背面处理后,在成型和单晶之前,将带有硅通孔的芯片或晶圆堆叠到着陆基板上。由于着陆晶圆的键合线中通常有互连金属,而这些互连金属通常由无铅焊料合金制成,因此在热压缩键合过程中这些焊料合金的变形成为制造商面临的一个问题。为了解决这个问题,在器件晶圆上涂覆具有所需强度的聚合物材料,以在焊料合金顶部形成保形保护层,从而实现临时键合和解粘过程。

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