The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to an 850 nm band high-responsivity detector. The differences of the detector lie in that: the detector comprises an n-type substrate located at the bottommost end of the detector; the n-type substrate sequentially comprises, from top to bottom, an aluminum oxide layer, an n-type contact layer, an n-type DBR layer, a lower limit layer, an absorption layer, an upper limit layer, a p-type contact layer, and an antireflection film layer; an n-type electrode layer and a p-type electrode layer are also comprised; the n-type electrode layer is located on the n-type contact layer and on one side of the n-type DBR layer; and the p-type electrode layer is located on the p-type contact layer and on one side of the antireflection film layer. The present invention increases a response rate, and facilitates the implementation of an anti-radiation, low-dark current, and high-responsivity detector.
展开▼
