PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES FOR DEPOSITING PASSIVATION FILMS ON MICROELECTRONIC STRUCTURES

摘要

A method to produce the microelectronic and display devices (e.g., micro-LEDs) which are coated with a passivation film is provided. In this method, a plasma-enhanced chemical vapor deposition (PE-CVD) process is provided and includes maintaining a flow of a deposition gas while pulsing an RF power between on and an off positions while simultaneously depositing a passivation film (120) on sidewall and top surfaces of a micro-LED structure or other display devices. The passivation film (120) contains silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. The passivation film (120) has a step coverage of greater than 70% or greater than 80%, such that the step coverage is a ratio of an average thickness of a sidewall portion (122) of the passivation film (120) to an average thickness of a top portion (124) of the passivation film (120).