The RGO-based biosensor according to the present invention reacts with a substrate; a source electrode and a drain electrode formed on the substrate; a reduced graphene oxide (RGO) channel formed between the source electrode and the drain electrode; and an RGO channel. It comprises a polydimethylsiloxane (PDMS) chip that supplies the solution; a passage layer that seals the reaction solution supplied via the PDMS chip from contact with the source and drain electrodes; and a gate electrode. At this time, the passivation layer is made of SU-8 photoresist, and the gate electrode is configured to be in direct contact with the reaction solution to perform liquid phase drive. By constructing the passivation layer from SU-8 photoresist, the reaction solution can be conveniently and stably supplied via the PDMS chip. By driving the gate electrode in liquid phase, it is possible to realize a field effect transistor (FET) type biosensor that can be driven with a gate voltage of about −1.0 V to 1.0 V and has high sensitivity.
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