Bis(ethylcyclopentadienyl)tin, a raw material for chemical vapor deposition, a method for manufacturing a thin film containing tin, and a method for manufacturing a tin oxide thin film

摘要

Bis(alkylcyclopentadienyl)tin, typified by bis(ethylcyclopentadienyl)tin, which has a high vapor pressure even at a low temperature, or bis(alkyltetramethylcyclopentadienyl)tin and these organotin compounds as main components A raw material for chemical vapor deposition and a method for manufacturing a thin film containing tin by an atomic layer deposition method using the raw material for chemical vapor deposition are provided. A raw material for chemical vapor deposition containing, as a main component, bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin represented by the following formula (1). (In formula (1), R 1 and R 2 each independently represent hydrogen or an alkyl group having 6 or less carbon atoms, and R 3 and R 4 each independently represent an alkyl group having 6 or less carbon atoms.)