Low temperature deposition and effect of plasma power on tin oxide thin films prepared by modified plasma enhanced chemical vapor deposition

摘要

This work presents low temperature (200 and 300℃) thin film deposition of tin oxide (SnO_2) using modified plasma enhanced chemical vapor deposition as a function of radio frequency power (100 - 500 W). Stannic chloride (SnCl_4) was used as precursor and oxygen (O_2, 300 SCCM) as reactant gas. Fine granular morphology was observed with tetragonal rutile structure grown along the [110] direction, at all the deposition conditions. Higher plasma power resulted in smoother morphology, improved crystallinity, and enhanced conductivity. Electrical resistivity value of as low as ～0.01 Ω cm was obtained at the deposition temperature of 300℃ and 250 W of plasma power.