Silicon Quantum Dot Precursor, Silicon Quantum Dot, Silicon Quantum Dot Precursor Manufacturing Method and Silicon Quantum Dot Manufacturing Method

摘要

PROBLEM TO BE SOLVED: To provide a silicon quantum dot precursor, a silicon quantum dot, a method for producing a silicon quantum dot precursor, and a method for producing a silicon quantum dot whose characteristics can be controlled by adjusting the structure of an HSQ polymer. A silicon quantum dot precursor according to the present invention comprises a hydrogen silsesquioxane polymer having a methoxy group represented by CH 3O1.5 . Further, the method for producing a silicon quantum dot precursor according to the present invention includes an alcohol mixing step of mixing trichlorosilane and alcohol to form a mixture, and reacting the mixture with water to produce a hydrogen silsesquioxane polymer. Including a polymer synthesis step. [Selection diagram] Fig. 1