structure and operation method of vertical-type transistor acting as a neuron in neuromorphic system, and a neuromorphic system using it

摘要

The present invention relates to a structure and an operation method of a vertical transistor that stores and discharges electric charges in a vertical transistor in which a floating body layer in the form of a nanowire is formed vertically to realize a spiking operation of a neuron, and a neuromorphic system using the same, A floating body layer in the form of a vertical nanowire formed vertically on a substrate, a source and a drain formed above and below the floating body layer, a gate insulating layer formed on the source and surrounding the floating body layer, and the gate insulating layer. and a gate formed outside, and a contact metal in contact with the source, drain, and gate to input or output an electrical signal.