- Using Insulator-metal transition electronic neuron High density neuromorphic system and High density neuromorphic system curcuit

摘要

A highly integrated neurocompic system including a neuron element using an insulator-conductor transition phenomenon, and a highly integrated novel lamp circuit. Resistance-variable layer-containing nanoscale It is a synapse element and a synapse element. It includes a neuron element electrically connected to one side and exhibiting electrical oscillation, and the neuron element may include a metal oxide layer having non-conductor-. Therefore, according to the present invention, a highly integrated novelromotopic system can be realized by applying an IMT element to a neuron element and using a nanoscale synapse element having analog resistance change characteristics. Furthermore, oscillator neuron elements and synaptic elements with analog resistance change characteristics can be utilized for artificial brain generation by providing pattern matching that improves accuracy by coupling it to a neuromotor system.