A method for improving the etching resistance of the resist underlayer film by pretreatment using hydrogen gas.

摘要

PROBLEM TO BE SOLVED: To provide a new method for improving resistance to halogen-containing gas etching. A method for improving the halogen-containing gas etching resistance of a silicon-containing film, which comprises a step of etching or ashing the silicon-containing film with a hydrogen gas-containing gas before etching the halogen-containing gas. [Selection diagram] None