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INTEGRATED CIRCUIT STRUCTURE WITH AVALANCHE JUNCTION TO DOPED SEMICONDUCTOR OVER SEMICONDUCTOR WELL
INTEGRATED CIRCUIT STRUCTURE WITH AVALANCHE JUNCTION TO DOPED SEMICONDUCTOR OVER SEMICONDUCTOR WELL
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机译:集成电路结构,具有雪崩交界处与半导体井中的掺杂半导体
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摘要
Embodiments of the disclosure provide an integrated circuit (IC) structure, including a doped well in a semiconductor substrate, in addition to a base region, emitter region, and collector region in the doped well. An insulative material is within the doped well, with a first end horizontally adjacent the collector region and a second end opposite the first end. A doped semiconductor region is within the doped well adjacent the second end of the insulative material. The doped semiconductor region is positioned to define an avalanche junction between the collector region and the doped semiconductor region across the doped well.
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