ELECTRON-SELECTIVE LAYER BASED ON INDIUM OXIDE DOPED WITH ALUMINUM, ITS MANUFACTURING METHOD AND PHOTOVOLTAIC DEVICE BASED ON IT

摘要

FIELD: solar energy. ;SUBSTANCE: invention relates to the field of solar energy, namely to photovoltaic converters based on semiconductor materials of the perovskite type. In general, the invention relates to photovoltaic devices: solar panels and photodetectors. The photovoltaic element contains a substrate on which an electron-collecting electrode, an electron-selective layer, a photoactive perovskite layer, a hole-selective layer and a hole-collecting electrode are sequentially applied. In this case, the substrate is made transparent and made of a material selected from the group: glass, quartz, plexiglass, polyethylene terephthalate, polyethylene, polyimide, thin glass, or opaque and made of a material selected from the group: p-, d-elements, steel, plastic, ceramics. The electron-collecting and hole-collecting electrodes are made translucent and made of at least one material selected from the group: transparent conductive oxides, electrically conductive polymers, d- and p-elements, carbon materials, or opaque and made of a material selected from the group: s-, p-, d-elements or their alloys, titanium nitride, graphite, carbon black. Indium oxide doped with aluminum is used as an electron-selective layer - (In:Al)2O3. As a photoactive perovskite layer, an active material of the general formula ABX3 is used, where A is the methylammonium, formamidinium, caesium, rubidium, guanidinium, ethylammonium cation or mixtures thereof; B is the divalent Pb2+, Sn2+, Ge2+ cation or mixtures thereof; X is the Cl-, Br-, I-anion or mixtures thereof. At least one component selected from the group is used as a hole-selective layer: organic semiconductor polymer materials of the p-type, oxides, halides, chalcogenides and pseudohalides of d-elements. ;EFFECT: increase in operational stability, efficiency of photovoltaic devices and a decrease in the percentage of short-circuited defective photovoltaic devices. ;12 cl, 9 tbl, 10 dwg