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Assemblies having Conductive Interconnects which are Laterally and Vertically Offset Relative to One Another

机译:具有导电互连的组件,其相对于彼此横向和垂直偏移

摘要

Some embodiments include an integrated assembly having a base which includes first circuitry. Memory decks are over the base. Each of the memory decks has a sense/access line coupled with the first circuitry. The memory decks and base are vertically spaced from one another by gaps. The gaps alternate in a vertical direction between first gaps and second gaps. Overlapping conductive paths extend from the sense/access lines to the first circuitry. The conductive paths include first conductive interconnects within the first gaps and second conductive interconnects within the second gaps. The first and second conductive interconnects are laterally offset relative to one another.
机译:一些实施例包括集成组件,其具有基座,该基座包括第一电路。 内存甲板在基础上。 每个存储器甲板具有与第一电路耦合的感测/接入线。 内存甲板和基座通过间隙彼此垂直间隔开。 间隙在第一间隙和第二间隙之间沿垂直方向交替。 重叠的导电路径从感测/接入线延伸到第一电路。 导电路径包括在第一间隙内的第一导电互连和第二间隙内的第二导电互连。 第一和第二导电互连相对于彼此横向偏移。

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