首页> 外国专利> Point-Source Model for Simulating Near-Field Effects From Structures of an Antenna

Point-Source Model for Simulating Near-Field Effects From Structures of an Antenna

机译:模拟天线结构近场效应的点源模型

摘要

This document describes techniques and systems to generate a point-source model for simulating near-field effects from structures of an antenna. The techniques and systems generate, based on near-field values extracted from electromagnetic simulations, respective far-field radiation patterns for active elements and, in some cases, passive elements of the antenna array. The far-field radiation patterns account for electromagnetic interactions between the active elements and an antenna structure, which can include passive elements of the antenna array. The techniques and systems output the far-field radiation patterns, which are effective to simulate, using an asymptotic numerical method, electromagnetic interactions between the antenna array and at least one interaction structure. Using the described point-source model, engineers can quickly and accurately simulate electromagnetic interactions between the antenna array and the interaction structure for various configurations and applications of the antenna array.
机译:本文档描述了生成用于模拟来自天线的结构的近场效果的点源模型的技术和系统。基于从电磁模拟中提取的近场值,各个远场辐射图案产生的技术和系统,在某些情况下,在某些情况下,在某些情况下,天线阵列的无源元件。远场辐射图案占主动元件和天线结构之间的电磁相互作用,其可以包括天线阵列的无源元件。该技术和系统输出了使用渐近数值方法,天线阵列与至少一个交互结构之间的电磁相互作用有效地模拟的远场辐射模式。使用所描述的点源模型,工程师可以快速准确地模拟天线阵列之间的电磁相互作用和天线阵列的各种配置和应用的各种配置和应用。

著录项

  • 公开/公告号US2022014289A1

    专利类型

  • 公开/公告日2022-01-13

    原文格式PDF

  • 申请/专利权人 APTIV TECHNOLOGIES LIMITED;

    申请/专利号US202016922740

  • 发明设计人 BRUNO F. CAMPS RAGA;

    申请日2020-07-07

  • 分类号H04B17/391;H04B17/345;H04B17/373;

  • 国家 US

  • 入库时间 2022-08-24 23:20:13

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号