CHARGE SENSING DEVICE WITH READOUT OF SIGNAL BY DETECTING A CHANGE OF CAPACITANCE OF COMBINED GATE AND QUANTUM CAPACITANCE COMPARED TO A REFERENCE CAPACITANCE

摘要

The present invention relates to a system comprising an electronic apparatus which comprises: —an electronic device comprising: —a gate electrode structure (G, BE); —a dielectric (D) arranged over the gate electrode (G, BE); and —a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (Cg) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (Cq) resulting in a total capacitance (Ctot); —a read-out circuit configured so that when the total capacitance (Ctot) changes due to a change in the quantum capacitance (Cq), an imbalance between the total capacitance (Ctot) and the reference capacitance (Cf) results in a change on the output voltage (Vo) that is amplified to provide the read-out signal (So). The present invention also relates to an electronic apparatus like the one of the system of the present invention.