Gas supply and layer deposition apparatus including the same

摘要

A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.