METHOD FOR MANUFACTURING VERTICAL RESONATOR-TYPE SURFACE EMITTING LASER ELEMENT, AND VERTICAL RESONATOR-TYPE SURFACE EMITTING LASER ELEMENT

摘要

The purpose of the present invention is to provide a vertical resonator-type surface emitting laser element which can inhibit dislocation nucleation in a semiconductor layer constituting a reflecting mirror comprising a semiconductor multilayer film, and a manufacturing method for said element. This manufacturing method for a vertical resonator-type surface emitting laser element comprises: a step for growing a first semiconductor layer 1 comprising a group-III nitride semiconductor including Al and In; and a step for growing a second semiconductor layer 2 comprising gallium nitride. The step for growing the first semiconductor layer 1 comprises a first growth step and a second growth step. The first growth step involves supplying an Al source gas, an In source gas, and a nitrogen source gas to grow a first layer 11, whereas the second growth step involves supplying an Al source gas, an In source gas, and a nitrogen source gas to grow a second layer 12 which has a higher In composition ratio than the first layer 11. Through alternate repetition of the steps for growing the first semiconductor layer 1 and for growing the second semiconductor layer 2, a first reflecting mirror 10 including a nitride semiconductor multilayer film is formed.