首页> 美国政府科技报告 >Manufacturability of vertical-cavity surface emitting lasers grown by organometallic vapor phase epitaxy

【24h】

Manufacturability of vertical-cavity surface emitting lasers grown by organometallic vapor phase epitaxy

机译：通过有机金属气相外延生长的垂直腔面发射激光器的可制造性

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

No abstact available.

著录项

作者
Hou, H. Q. ; Chui, H. C. ; Hammons, B. E. ; Breiland, W. G. ; Choquette, K. D.;
展开▼
作者单位

展开▼
年度 1996
页码 1-2
总页数 2
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Aluminium Arsenides; Gallium Arsenides; Semiconductor Lasers; Cavity Resonators; Epitaxy; Fabrication; Semiconductor Materials;

机译：砷化铝;砷化镓;半导体激光器;腔体谐振器;外延;制造;半导体材料;
入库时间 2022-08-29 11:03:27

相似文献

外文文献
中文文献
专利

1. Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry [J] . Hou H.Q., Chui H.C. IEEE Photonics Technology Letters . 1996,第10期

机译：通过金属有机气相外延和原位反射法生长的高度均匀且可重现的垂直腔面发射激光器
2. Vertical-cavity surface-emitting quantum-dot laser with low threshold current grown by metal-organic vapor phase epitaxy [J] . F. Hopfer, I. Kaiander, A. Lochmann, Applied Physics Letters . 2006,第6期

机译：金属有机气相外延生长低阈值电流的垂直腔面发射量子点激光器
3. Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5)B GaAs substrates by molecular beam epitaxy [J] . Y. Higuchi, S. Osaki, T. Kitada, Solid-State Electronics . 2006,第6期

机译：（7 7 5）B GaAs衬底上通过分子束外延生长的GaAs量子线垂直腔面发射激光器的室温激射
4. Vertical-cavity surface-emitting-lasers with 21 efficiency by metalorganic vapor phase epitaxy [C] . Lear, K.L., Schneider, . 1994

机译：垂直腔表面发射激光器，金属有机气相外延效率高达21％
5. Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy. [D] . Jun, Sung Won. 2001

机译：表面活性剂控制通过有机金属气相外延生长的磷化铟镓和砷化镓外延层的表面过程。
6. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’ [O] . Yang Mei, Guo-En Weng, Bao-Ping Zhang, 2017

机译：覆盖绿色间隙的量子点垂直腔表面发射激光器
7. Manufacturability of vertical-cavity surface emitting lasers grown by organometallic vapor phase epitaxy [O] . Hou, H. Q., Chui, H. C., Hammons, B. E., 1996

机译：通过有机金属气相外延生长的垂直腔面发射激光器的可制造性
8. Manufacturability of vertical-cavity surface emitting lasers grown by organometallic vapor phase epitaxy [R] . Hou, H. Q., Chui, H. C., Hammons, B. E., 1996

机译：通过有机金属气相外延生长的垂直腔面发射激光器的可制造性

Manufacturability of vertical-cavity surface emitting lasers grown by organometallic vapor phase epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅