Method for growing two-dimensional transition metal chalcogenide film and method of manufacturing device including the same

摘要

A method for growing a two-dimensional transition metal chalcogenide thin film and a method for manufacturing a device including the same are disclosed. The disclosed method for growing a two-dimensional transition metal chalcogenide thin film includes disposing a metal layer having a predetermined pattern shape on one surface of a substrate, individually supplying a chalcogen precursor to a reaction chamber provided with the substrate, and transferring to the reaction chamber supplying a metal precursor; and discharging the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein the supply amount of the chalcogen precursor supplied to the reaction chamber and the supply amount of the transition metal precursor are predetermined can be adjusted in the ratio of