首页> 外国专利> TWO-DIMENSIONAL TRANSITION METAL CHALCOGENIDE NANOSTRUCTURE, DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE TWO-DIMENSIONAL TRANSITION METAL CHALCOGENIDE NANOSTRUCTURE

TWO-DIMENSIONAL TRANSITION METAL CHALCOGENIDE NANOSTRUCTURE, DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE TWO-DIMENSIONAL TRANSITION METAL CHALCOGENIDE NANOSTRUCTURE

机译:二维过渡金属硫属化物纳米结构,包括该装置的装置和制备二维过渡金属硫属化物纳米结构的方法

摘要

Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.
机译:示例实施方式涉及一种制备二维(2D)过渡金属硫属元素化物纳米结构的方法,该方法包括通过在包含溶剂的组合物中过渡金属前体与硫属元素化物前体之间的反应来制备2D过渡金属硫属元素化物纳米结构,其中,硫族元素前体是包括连接两个相邻的硫族元素的第一键和连接两个相邻的硫族元素之一的第二键和与其相邻的杂元素的化合物,第二键的结合能为结合的110%以下第一键的能量,由此制备的2D过渡金属硫属元素化物纳米结构以及包括2D过渡金属硫属元素化物纳米结构的器件。

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