Heterojunction diode using 2D thin film insertion layer and manufacturing method thereof

摘要

The present invention relates to a heterojunction diode using a 2D thin film insertion layer. A heterojunction diode using a 2D thin film insertion layer according to an embodiment of the present invention includes a first semiconductor layer that is a semiconductor, a 2D thin film insertion layer in which the 2D thin film material is formed in layers on the first semiconductor layer, and the 2D thin film insertion and a second semiconductor layer that is a semiconductor stacked on the layer. The heterojunction diode using this 2D thin film insertion layer has the effect of improving the reaction performance.