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3D ReRAM formed by metal-assisted chemical etching with replacement wordline and wordline separation
3D ReRAM formed by metal-assisted chemical etching with replacement wordline and wordline separation
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机译:通过金属辅助化学蚀刻形成的3D RERAM与替换字线和字线分离
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摘要
Metal-assisted chemical etching is employed to form a three-dimensional (3D) resistive random access memory (ReRAM) in which the etching aspect ratio limit is extended and the top trench and bottom trench CD uniformity is improved. The 3D ReRAM includes a metal catalyst located between a bitline electrode and a selector device. Further, the 3D ReRAM includes vertically stacked and spaced apart replacement wordline electrodes that are located adjacent to the bitline electrode.
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机译:金属辅助化学蚀刻用于形成三维(3D)电阻随机存取存储器(RERAM),其中蚀刻纵横比限制延伸,并且顶部沟槽和底部沟槽CD均匀性得到改善。 3D RERAM包括位于位线电极和选择器装置之间的金属催化剂。 此外,3D reram包括垂直堆叠和间隔开的替换字线电极,其位于位线电极附近。
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