STRAINED QUANTUM WELL STRUCTURE, OPTICAL SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR LASER

摘要

This strained quantum well structure (30) is a type I strained quantum well structure in which InP crystal is grown as a substrate, and the light emission wavelength is 1.9-2.5 µm (inclusive), wherein a well layer (31) is an InGaAs, InAs, or InGaAsSb crystal having compressive strain, a barrier layer (32) is an InGaAsSb crystal having tensile strain, and a band discontinuity (47) of the conduction band is 100 meV or greater.　It is thereby possible to increase the output of an optical semiconductor component such as a semiconductor laser and a 2-µm-wavelength-band strained quantum well structure.