首页> 外国专利> CVD GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS

CVD GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS

机译:CVD气流轮廓调制控制等离子体CVD膜中的覆盖物控制

摘要

Methods for controlling local stress and overlay error of one or more patterning films include adjusting a gas flow profile of gases introduced into a chamber body, flowing the gases within the chamber body towards a substrate, a substrate and unifying the center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body including one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into one or more processing regions. The blocker plate may have a first area and a second area, and the first area and the second area may each have a plurality of holes. The chamber body may have a dual zone heater.
机译:用于控制一个或多个图案化膜的局部应力和覆盖误差的方法包括调节引入腔室主体的气体的气体流动轮廓,将腔体内的气体朝向基板,基板和统一中心到边缘温度的气体流动 通过用双区加热器控制基板温度来衬底的轮廓。 用于沉积膜的腔室可包括包括一个或多个处理区域的腔室主体。 腔室主体可包括气体分配组件,该气体分配组件具有阻挡板,用于将气体输送到一个或多个处理区域中。 阻挡板可以具有第一区域和第二区域,并且第一区域和第二区域可以各自具有多个孔。 腔室主体可以具有双区加热器。

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