METHOD FOR FORMING BASE FILM OF GRAPHENE GRAPHENE FORMING METHOD AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE

摘要

Provided is a method for producing an underlying film of graphene capable of producing high-quality graphene. MOCVD of forming a first nickel thin film 50a (a second nickel thin film 50b, a third nickel thin film 50c) on the wafer W using hydrogen gas and ammonia gas as reducing gases, and the formed first nickel A first post-annealing process in which the wafer W is heated to a temperature at which impurities contained in the thin film 50a or the like are desorbed as a gas, and the wafer W to a temperature at which nickel crystal grains grow in the first nickel thin film 50a or the like A second post-annealing treatment of heating is repeatedly performed in this order, and the first nickel thin film 50a, the second nickel thin film 50b, and the third nickel thin film 50c are laminated to form a nickel film 50. do.