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METHOD FOR FORMING BASE FILM OF GRAPHENE, GRAPHENE FORMING METHOD, AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE
METHOD FOR FORMING BASE FILM OF GRAPHENE, GRAPHENE FORMING METHOD, AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE
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机译:形成石墨烯基膜的方法,石墨烯形成方法和形成石墨烯基膜的装置
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摘要
A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.
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