METHOD FOR FORMING BASE FILM OF GRAPHENE, GRAPHENE FORMING METHOD, AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE

摘要

PROBLEM TO BE SOLVED: To provide a method for generating a base film of graphene, capable of generating high-quality graphene.;SOLUTION: A nickel film 50 is formed by laminating a first nickel thin film 50a, a second nickel thin film 50b, and a third nickel thin film 50c by repeatedly performing the following steps in this order, comprising: MOCVD of forming the first nickel thin film 50a (the second nickel thin film 50b, and the third nickel thin film 50c) on a wafer W by using a hydrogen gas and an ammonia gas as a reducing gas; a first post-annealing treatment of heating the wafer W up to a temperature at which impurities contained in the formed first nickel thin film 50a and the like are eliminated as a gas; and a second post-annealing treatment of heating the wafer W up to a temperature at which crystal grains of nickel grow in the first nickel thin film 50a and the like.;SELECTED DRAWING: Figure 6;COPYRIGHT: (C)2016,JPO&INPIT