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6T SRAM 6T Non-volatile SRAM based on flash memory and method of operating the same

机译:6T SRAM 6T非易失性SRAM基于闪存和操作方法

摘要

The present invention relates to a 6T non-volatile SRAM based on a flash memory that improves the volatile characteristics of 6T SRAM (Static random access memory) and maintains the information without disappearing even after power is turned off while having a fast operation speed and an operating method thereof. it's about The flash memory-based 6T nonvolatile SRAM according to the present invention includes a first inverter, a second inverter, a first pass gate and a second pass gate. The first inverter is formed of a first pull down transistor coupled to a first pull up transistor. Also, the second inverter is formed of a second pull down transistor connected to a second pull up transistor. In addition, the first pass gate includes a non-volatile memory device connected between an output of the first inverter and a bit line bar node. In addition, the second pass gate is formed of a non-volatile memory device connected between the output of the second inverter and a bit line node.
机译:本发明涉及一种基于闪存的6T非易失性SRAM,其提高了6T SRAM(静态随机存取存储器)的挥发特性,并且即使在具有快速操作速度的电源之后,即使在电源关闭后也保持信息而不会消失。 其操作方法。 它是关于根据本发明的基于闪存的6T非易失性SRAM包括第一逆变器,第二逆变器,第一通过栅极和第二通道栅极。 第一逆变器由耦合到第一拉起晶体管的第一拉向下晶体管形成。 而且,第二逆变器由连接到第二上拉晶体管的第二拉向下晶体管形成。 另外,第一传递栅极包括连接在第一逆变器和位线条节点的输出之间的非易失性存储器件。 另外,第二传递栅极由连接在第二逆变器和位线节点的输出之间的非易失性存储器件形成。

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