Silicon carbide shottky diode forward chracteristic is improved and manufacturing method thereof

摘要

The present invention provides a silicon carbide Schottky diode with improved forward characteristics and a method for manufacturing the same, comprising: forming a metal layer in which a Schottky metal layer-diffusion barrier metal layer-pad metal layer is laminated on an epitaxial layer; etching the metal layer; It is a technical gist to include the step of heat-treating the etched metal layer. Thereby, the diffusion barrier metal layer is formed between the pad metal layer and the Schottky metal layer, thereby preventing the Schottky metal layer from penetrating into the pad metal layer during heat treatment. In addition, it is possible to reduce the interfacial resistance and improve the Schottky bonding properties through high-temperature heat treatment.