SILICON CARBIDE SCHOTTKY DIODE WITH IMPROVED FORWARD CHARACTERISTIC AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a silicon carbide Schottky diode with improved forward characteristic and to a method for manufacturing the same. The method includes: a step of forming a metal layer having a Schottky metal layer, an extension barrier metal layer, and a pad metal layer stacked on the upper side of an epilayer; and a step of heat-treating the etched metal layer. Thereby, the extension barrier metal layer is formed between the pad metal layer and the Schottky metal layer so as to have an effect of preventing the Shottky metal layer from penetrating into the pad metal layer. Also, an interfacial resistance is reduced through high temperature heat treatment, and Schottky adhesive properties can be improved.;COPYRIGHT KIPO 2016