- III/V - SELECTIVE SELF-ALIGNED PATTERNING OF SILICON GERMANIUM GERMANIUM AND TYPE III/V MATERIALS USING A SULFUR-CONTAINING MASK

摘要

A method for patterning a substrate comprising multiple layers using a sulfur-based mask includes providing a substrate comprising a first layer and a second layer arranged over the first layer. The first layer comprises a material selected from the group consisting of germanium, silicon germanium and type III/V materials. The method includes depositing a mask layer comprising a sulfur species on sidewalls of the first layer and the second layer by exposing the substrate to a first wet chemical reaction. The method includes removing the mask layer on the sidewalls of the second layer while not completely removing the mask layer on the sidewalls of the first layer by exposing the substrate to a second wet chemistry. The method includes selectively etching the second layer relative to the first layer and a mask layer on sidewalls of the first layer by exposing the substrate to a third wet chemical reaction.