XPS XRF SILICON GERMANIUM THICKNESS AND COMPOSITION DETERMINATION USING COMBINED XPS AND XRF TECHNOLOGIES

摘要

A system and approach for silicon germanium thickness and composition determination using combined XPS and XRF techniques is described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is placed in the path of the X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding the sample with the X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam is also collected. The thickness or composition or both of the silicon germanium film is determined from the XRF signal or the XPS signal or both.