METHOD FOR FORMING OHMIC CONTACT TO P-TYPE SILICON CARBIDE

摘要

To provide a method for forming an ohmic contact to a p-type silicon carbide layer (1).SOLUTION: A method for forming an ohmic contact to a p-type silicon carbide layer (1) includes the steps of: providing a p-type silicon carbide layer (1) having a first major surface (18) and a second major surface (19) opposite the first major surface (18); and implanting ions from the first major surface (18) into the p-type silicon carbide layer (1) to form an implanted layer (11) adjacent to the first major surface (18). The method is characterized in that the step of implanting ions into the p-type silicon carbide layer (1) is performed by plasma immersion ion implantation. The p-type silicon carbide layer (1) is immersed in plasma (3) comprising a first ion (31) and a second ion (32), where the first ion (31) is an ionized aluminum atom and the second ion (32) is different from the first ion (31).SELECTED DRAWING: Figure 2