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Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element
Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element
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机译:用于在加热器和相变元件之间形成具有低偏差接触区域的相变存储器(PCM)单元的方法
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摘要
A phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element is provided. The PCM cell comprises a bottom electrode, a dielectric layer, a heater, a phase change element, and a top electrode. The dielectric layer overlies the bottom electrode. The heater extends upward from the bottom electrode, through the dielectric layer. Further, the heater has a top surface that is substantially planar and that is spaced below a top surface of the dielectric layer. The phase change element overlies the dielectric layer and protrudes into the dielectric layer to contact with the top surface of the heater. Also provided is a method for manufacturing the PCM cell.
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