ADVANCED ELECTRONIC DEVICE STRUCTURES USING SEMICONDUCTOR STRUCTURES AND SUPERLATTICES

摘要

A semiconductor structure and a method of forming the semiconductor structure are disclosed. For example, p-type or n-type semiconductor structures are disclosed. The semiconductor structure has a polar crystal structure having a growth axis substantially parallel to an axis of spontaneous polarization of the polar crystal structure. The semiconductor structure is changed in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material to induce a p-type or n-type conductivity along the growth axis.