BAND STRUCTURE AND ELECTRONIC TRANSPORT PROPERTIES IN II-VI NANO-SEMICONDUCTORS. APPLICATION TO INFRARED DETECTORS SUPERLATTICES AND ALLOYS

摘要

We report here electronic transport properties measurements. scattering mechanisms and theoretical results on Fermi energy, donor state energy and modeling carrier charge mobility in the ternary alloys Hg_(1-x)Cd_xTe (x = 0.22) medium-infrared detector. We report again the band structure, magneto-transport results, X-ray diffraction, Seebeck and Shubnikov-de Haas effects (SDH) in the medium-infrared detector, narrow gap and two-dimensional p-type semiconductor nm)/CdTe(3 nm) superlattice. The later sample is an alternative to the investigated alloy.