METHOD FOR MANUFACTURING A TOP EMISSION INDIUM GALLIUM ZINC OXIDE THIN FILM TRANSISTOR DEVICE

摘要

The present invention discloses a method for manufacturing a top emission indium gallium zinc oxide thin film transistor device, includes a first lithographing step, a second lithographing step, a gate insulation layer forming step, a third lithographing step, a source via hole forming step, an indium gallium zinc oxide active layer exposing step, a source/drain forming step, a planarization layer forming step, a fourth lithographing step, a fifth lithographing step, and a sixth lithographing step. The polyimide electrode barrier spacer is used to manufacture the gate electrode and the source/drain. The polyimide electrode barrier spacers can directly form the source/drain and the gate electrode such that three masks are reduced to be one mask. Moreover, PI can increase density of current of a channel. Accordingly the manufacturing method is simplified and production rate thereof is improved.