首页> 外国专利> SULFUR-DOPED SILICON NEGATIVE ELECTRODE MATERIAL, METHOD FOR PRODUCING SAME, LITHIUM SECONDARY BATTERY NEGATIVE ELECTRODE INCLUDING NEGATIVE ELECTRODE MATERIAL, AND LITHIUM SECONDARY BATTERY COMPRISING NEGATIVE ELECTRODE

SULFUR-DOPED SILICON NEGATIVE ELECTRODE MATERIAL, METHOD FOR PRODUCING SAME, LITHIUM SECONDARY BATTERY NEGATIVE ELECTRODE INCLUDING NEGATIVE ELECTRODE MATERIAL, AND LITHIUM SECONDARY BATTERY COMPRISING NEGATIVE ELECTRODE

机译:硫掺杂硅负极材料,制备方法,包括负极材料的锂二次电池负极,包括负电极的锂二次电池

摘要

A sulfur-doped silicon negative electrode material, a preparation method for a sulfur-doped silicon negative electrode material, a negative electrode for a lithium secondary battery comprising the sulfur-doped silicon negative electrode material, and a lithium secondary battery comprising the negative electrode, wherein the sulfur-doped silicon negative electrode material has an internal pore channel having an average width of 500 nm to 3 μm and an average external diameter of 1 μm to 5 μm.
机译:硫掺杂的硅负极材料,用于硫掺杂硅负极材料的制备方法,用于锂二次电池的负电极,包括硫掺杂的硅负极材料,以及包括负电极的锂二次电池, 其中硫掺杂的硅负极材料具有平均宽度为500nm至3μm的内部孔通道,平均外径为1μm至5μm。

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