首页> 外国专利> SULFUR-DOPED SILICON NEGATIVE ELECTRODE MATERIAL, METHOD FOR PRODUCING SAME, LITHIUM SECONDARY BATTERY NEGATIVE ELECTRODE INCLUDING NEGATIVE ELECTRODE MATERIAL, AND LITHIUM SECONDARY BATTERY COMPRISING NEGATIVE ELECTRODE

SULFUR-DOPED SILICON NEGATIVE ELECTRODE MATERIAL, METHOD FOR PRODUCING SAME, LITHIUM SECONDARY BATTERY NEGATIVE ELECTRODE INCLUDING NEGATIVE ELECTRODE MATERIAL, AND LITHIUM SECONDARY BATTERY COMPRISING NEGATIVE ELECTRODE

机译:硫掺杂硅负极材料,制备方法,包括负极材料的锂二次电池负极,包括负电极的锂二次电池

摘要

The present invention provides a sulfur-doped silicon negative electrode material which has an internal pore channel having an average width of 500 nm to 3 µm and has an average diameter of 1 µm to 5 µm, a preparation method thereof, a negative electrode for a lithium secondary battery comprising the same, and a lithium secondary battery comprising the negative electrode.
机译:本发明提供一种硫掺杂的硅负极材料,其具有平均宽度为500nm至3μm的内部孔通道,平均直径为1μm至5μm,其制备方法,用于a的负电极 包含相同的锂二次电池和包含负极的锂二次电池。

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