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METHOD FOR MANUFACTURING RUTILE TITANIUM DIOXIDE LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
METHOD FOR MANUFACTURING RUTILE TITANIUM DIOXIDE LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
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机译:制造金红石二氧化钛层和半导体器件的方法
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摘要
A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti).
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