Method for manufacturing a rutile titanium dioxide layer and a semiconductor device including the rutile titanium dioxide layer

摘要

A method of manufacturing a rutile titanium dioxide layer according to the present invention includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO 2 ) material on the sacrificial layer. The sacrificial layer includes a rutile phase metal oxide. The amount of oxygen vacancies in the sacrificial layer after deposition of the titanium dioxide material is greater than the amount of oxygen vacancies in the sacrificial layer before deposition of the titanium dioxide material. The metal oxide includes a metal other than titanium (Ti).